P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON Infineon BSZ086P03NS3EGATMA1

RS Stock No.:
8259134
Mfr. Prt No.:
BSZ086P03NS3EGATMA1
Brand:
Infineon

Technical Reference

Legislation and Compliance

RoHS Status: Exempt

Statement of Conformity

RS Components
Statement of Conformity

This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.

Compliant Product Details
RS stock number 8259134
Product description P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON Infineon BSZ086P03NS3EGATMA1
Manufacturer / Brand Infineon
Manufacturer part number BSZ086P03NS3EGATMA1

The foregoing information relates to product sold on, or after, the date shown below.

RS COMPONENTS

Date Nov 24, 2024

RS Components Pte Ltd Robinson Road, P.O. Box 1582, Singapore 903132


Product Details

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C


Specifications

Attribute Value
Brand Infineon
Maximum Power Dissipation 69 W
Number of Elements per Chip 1
Series OptiMOS P
Minimum Operating Temperature -55 °C
Maximum Gate Source Voltage -25 V, +25 V
Maximum Drain Source Resistance 13.4 mΩ
Mounting Type Surface Mount
Transistor Configuration Single
Package Type TSDSON
Maximum Operating Temperature +150 °C
Length 3.4 mm
Typical Gate Charge @ Vgs 43.2 nC @ 10 V
Maximum Gate Threshold Voltage 1.9 V
Channel Type P
Height 1.1 mm
Width 3.4 mm
Minimum Gate Threshold Voltage 3.1 V
Channel Mode Enhancement
Pin Count 8
Maximum Drain Source Voltage 30 V
Transistor Material Si
Maximum Continuous Drain Current 40 A
Checking stock...
IDR
228,240.64
Out of stock
Price Pack (1 Pack of 20)
Pack(s)Per Pack(IDR)Per Unit(IDR)
1228,240.6411,412.03
*price per unit indicative
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