Infineon IKW25N120T2FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 8977403
- Mfr. Prt No.:
- IKW25N120T2FKSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
EU Directives 2011/65/EU and 2015/863 restrict the use of the 10 substances below in the manufacture of specified types of electrical equipment.
Whilst this restriction does not legally apply to components, it is recognised that component “compliance” is relevant to many customers.
RS definition of RoHS Compliance:
- The product does not contain any of the restricted substances in concentrations and applications banned by the Directive,
- and for components, the product is capable of being worked on at the higher temperatures required by lead–free soldering
The restricted substances and maximum allowed concentrations in the homogenous material are, by weight:
| Substance | Concentration |
| Lead | 0.1% |
| Mercury | 0.1% |
| PBB (Polybrominated Biphenyls) | 0.1% |
| PBDE ( Polybrominated Diphenyl Ethers) | 0.1% |
| Hexavalent Chromium | 0.1% |
| Cadmium | 0.01% |
| DEHP (Bis (2-Ethylhexl) phthalate) | 0.1% |
| BBP (Benzyl butyl phthalate) | 0.1% |
| DBP (Dibutyl phthalate) | 0.1% |
| DIBP (Diisobutyl phthalate) | 0.1% |
The supplier of the item listed below has informed RS Components that the product is "RoHS Compliant".
RS Components has taken all reasonable steps to confirm this statement. Information relates only to products sold on or after the date of this certificate.
| RS stock number | 8977403 |
| Product description | Infineon IKW25N120T2FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole |
| Manufacturer / Brand | Infineon |
| Manufacturer part number | IKW25N120T2FKSA1 |
RS Components Ltd, Birchington Road, Corby, Northants, NN17 9RS, UK
Statement of Conformity
This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.
| RS stock number | 8977403 |
| Product description | Infineon IKW25N120T2FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole |
| Manufacturer / Brand | Infineon |
| Manufacturer part number | IKW25N120T2FKSA1 |
The foregoing information relates to product sold on, or after, the date shown below.
RS COMPONENTS
| Date | Dec 28, 2024 |
RS Components Pte Ltd Robinson Road, P.O. Box 1582, Singapore 903132
Product Details
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
Specifications
| Attribute | Value |
| Brand | Infineon |
| Maximum Power Dissipation | 349 W |
| Minimum Operating Temperature | -40 °C |
| Maximum Continuous Collector Current | 50 A |
| Gate Capacitance | 1600 pF |
| Mounting Type | Through Hole |
| Transistor Configuration | Single |
| Package Type | TO-247 |
| Maximum Operating Temperature | +175 °C |
| Energy Rating | 4.3 mJ |
| Channel Type | N |
| Dimensions | 16.13 x 5.21 x 21.1 mm |
| Pin Count | 3 |
| Maximum Gate Emitter Voltage | ±20 V |
| Maximum Collector Emitter Voltage | 1200 V |