IRF3205PBF N-Channel MOSFET, 110 A, 55 V HEXFET, 3-Pin TO-220AB Infineon
- RS Stock No.:
- 5409783
- Mfr. Prt No.:
- IRF3205PBF
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
EU Directives 2011/65/EU and 2015/863 restrict the use of the 10 substances below in the manufacture of specified types of electrical equipment.
Whilst this restriction does not legally apply to components, it is recognised that component “compliance” is relevant to many customers.
RS definition of RoHS Compliance:
- The product does not contain any of the restricted substances in concentrations and applications banned by the Directive,
- and for components, the product is capable of being worked on at the higher temperatures required by lead–free soldering
The restricted substances and maximum allowed concentrations in the homogenous material are, by weight:
| Substance | Concentration |
| Lead | 0.1% |
| Mercury | 0.1% |
| PBB (Polybrominated Biphenyls) | 0.1% |
| PBDE ( Polybrominated Diphenyl Ethers) | 0.1% |
| Hexavalent Chromium | 0.1% |
| Cadmium | 0.01% |
| DEHP (Bis (2-Ethylhexl) phthalate) | 0.1% |
| BBP (Benzyl butyl phthalate) | 0.1% |
| DBP (Dibutyl phthalate) | 0.1% |
| DIBP (Diisobutyl phthalate) | 0.1% |
The supplier of the item listed below has informed RS Components that the product is "RoHS Compliant".
RS Components has taken all reasonable steps to confirm this statement. Information relates only to products sold on or after the date of this certificate.
| RS stock number | 5409783 |
| Product description | IRF3205PBF N-Channel MOSFET, 110 A, 55 V HEXFET, 3-Pin TO-220AB Infineon |
| Manufacturer / Brand | Infineon |
| Manufacturer part number | IRF3205PBF |
RS Components Ltd, Birchington Road, Corby, Northants, NN17 9RS, UK
Statement of Conformity
This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.
| RS stock number | 5409783 |
| Product description | IRF3205PBF N-Channel MOSFET, 110 A, 55 V HEXFET, 3-Pin TO-220AB Infineon |
| Manufacturer / Brand | Infineon |
| Manufacturer part number | IRF3205PBF |
The foregoing information relates to product sold on, or after, the date shown below.
RS COMPONENTS
| Date | Nov 21, 2024 |
RS Components Pte Ltd Robinson Road, P.O. Box 1582, Singapore 903132
Product Details
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Specifications
| Attribute | Value |
| Brand | Infineon |
| Channel Type | N |
| Maximum Continuous Drain Current | 110 A |
| Maximum Drain Source Voltage | 55 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4 V |
| Minimum Gate Threshold Voltage | 2 V |
| Maximum Power Dissipation | 200 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Series | HEXFET |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 146 nC @ 10 V |
| Height | 8.77 mm |
| Maximum Operating Temperature | +175 °C |
| Length | 10.54 mm |
| Width | 4.69 mm |
| Transistor Material | Si |
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